IPC60N04S4L06ATMA1
- Manufacturer
- Infineon Technologies
- Product Category
- Transistors - FETs, MOSFETs - Single
- Description
- MOSFET N-CH 8TDSON
- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 60A (Tc)
- Drain to Source Voltage (Vdss) :
- 40V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- 8-PowerVDFN
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Obsolete
- Power Dissipation (Max) :
- 63W (Tc)
- Rds On (Max) @ Id, Vgs :
- 5.6 mOhm @ 30A, 10V
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Supplier Device Package :
- PG-TDSON-8-23
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±16V
- Vgs(th) (Max) @ Id :
- 2.2V @ 30µA
- Datasheets
- IPC60N04S4L06ATMA1
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