2SK1119(F)

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4A (Ta)

Drain to Source Voltage (Vdss) :

1000V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-220-3

Packaging :

Tube

Part Status :

Obsolete

Power Dissipation (Max) :

100W (Tc)

Rds On (Max) @ Id, Vgs :

3.8 Ohm @ 2A, 10V

Series :

-

Supplier Device Package :

TO-220AB

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 1mA