IRF100P219XKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

-

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

12020pF @ 50V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-247-3

Packaging :

-

Part Status :

Active

Power Dissipation (Max) :

341W (Tc)

Rds On (Max) @ Id, Vgs :

1.7 mOhm @ 100A, 10V

Series :

StrongIRFET™

Supplier Device Package :

TO-247AC

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.8V @ 278µA