IPC302N20N3X1SA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

1A (Tj)

Drain to Source Voltage (Vdss) :

200V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-

Package / Case :

Die

Packaging :

-

Part Status :

Active

Power Dissipation (Max) :

-

Rds On (Max) @ Id, Vgs :

100 mOhm @ 2A, 10V

Series :

OptiMOS™

Supplier Device Package :

Sawn on foil

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

4V @ 260µA