IPS70R1K4P7SAKMA1

Manufacturer
Infineon Technologies
Product Category
Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CHANNEL 700V 4A TO251
Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
4A (Tc)
Drain to Source Voltage (Vdss) :
700V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
4.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
158pF @ 400V
Mounting Type :
Through Hole
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
TO-251-3 Stub Leads, IPak
Packaging :
Tube
Part Status :
Active
Power Dissipation (Max) :
22.7W (Tc)
Rds On (Max) @ Id, Vgs :
1.4 Ohm @ 700mA, 10V
Series :
CoolMOS™ P7
Supplier Device Package :
PG-TO251
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±16V
Vgs(th) (Max) @ Id :
3.5V @ 40µA
Datasheets
IPS70R1K4P7SAKMA1

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