IPS70R1K4P7SAKMA1
- Manufacturer
- Infineon Technologies
- Product Category
- Transistors - FETs, MOSFETs - Single
- Description
- MOSFET N-CHANNEL 700V 4A TO251
- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 4A (Tc)
- Drain to Source Voltage (Vdss) :
- 700V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 4.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 158pF @ 400V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- TO-251-3 Stub Leads, IPak
- Packaging :
- Tube
- Part Status :
- Active
- Power Dissipation (Max) :
- 22.7W (Tc)
- Rds On (Max) @ Id, Vgs :
- 1.4 Ohm @ 700mA, 10V
- Series :
- CoolMOS™ P7
- Supplier Device Package :
- PG-TO251
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±16V
- Vgs(th) (Max) @ Id :
- 3.5V @ 40µA
- Datasheets
- IPS70R1K4P7SAKMA1
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