SI2301BDS-T1-GE3

Manufacturer :

Vishay Siliconix

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2.2A (Ta)

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

375pF @ 6V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Digi-Reel®

Part Status :

Active

Power Dissipation (Max) :

700mW (Ta)

Rds On (Max) @ Id, Vgs :

100 mOhm @ 2.8A, 4.5V

Series :

TrenchFET®

Supplier Device Package :

SOT-23-3 (TO-236)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

950mV @ 250µA