2SA949-Y,ONK-1F(M

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

50mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 10mA, 5V

Frequency - Transition :

120MHz

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 Long Body

Packaging :

Bulk

Part Status :

Obsolete

Power - Max :

800mW

Series :

-

Supplier Device Package :

TO-92MOD

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

800mV @ 1mA, 10A

Voltage - Collector Emitter Breakdown (Max) :

150V