2SK879-GR(TE85L,F)

Manufacturer
Toshiba Semiconductor and Storage
Product Category
Transistors - JFETs
Description
JFET N-CH 0.1W USM
Manufacturer :
Toshiba Semiconductor and Storage
Product Category :
Transistors - JFETs
Current - Drain (Idss) @ Vds (Vgs=0) :
2.6mA @ 10V
Current Drain (Id) - Max :
-
Drain to Source Voltage (Vdss) :
-
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
8.2pF @ 10V
Mounting Type :
Surface Mount
Operating Temperature :
125°C (TJ)
Package / Case :
SC-70, SOT-323
Packaging :
Cut Tape (CT)
Part Status :
Discontinued at Digi-Key
Power - Max :
100mW
Resistance - RDS(On) :
-
Series :
-
Supplier Device Package :
USM
Voltage - Breakdown (V(BR)GSS) :
-
Voltage - Cutoff (VGS off) @ Id :
400mV @ 100nA
Datasheets
2SK879-GR(TE85L,F)

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