IRG7CH30K10EF
- Manufacturer
- Infineon Technologies
- Product Category
- Transistors - IGBTs - Single
- Description
- IGBT CHIP WAFER
- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Current - Collector (Ic) (Max) :
- 10A
- Current - Collector Pulsed (Icm) :
- -
- Gate Charge :
- 4.8nC
- IGBT Type :
- Trench
- Input Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 175°C (TJ)
- Package / Case :
- Die
- Packaging :
- -
- Part Status :
- Active
- Power - Max :
- -
- Reverse Recovery Time (trr) :
- -
- Series :
- -
- Supplier Device Package :
- Die
- Switching Energy :
- -
- Td (on/off) @ 25°C :
- 10ns/90ns
- Test Condition :
- 600V, 10A, 22 Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 2.56V @ 15V, 10A
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Datasheets
- IRG7CH30K10EF
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IRG7CH11K10EF | Infineon Technologies | 0 | IGBT 1200V DIE |
IRG7CH20K10EF | Infineon Technologies | 0 | IGBT 1200V DIE |
IRG7CH23K10EF | Infineon Technologies | 0 | IGBT 1200V DIE |
IRG7CH28UED | Infineon Technologies | 0 | IGBT 1200V ULTRA FAST DIE |
IRG7CH28UEF | Infineon Technologies | 0 | IGBT 1200V ULTRA FAST DIE |
IRG7CH35UED | Infineon Technologies | 0 | IGBT 1200V ULTRA FAST DIE |
IRG7CH35UEF | Infineon Technologies | 0 | IGBT 1200V ULTRA FAST DIE |
IRG7CH37K10EF | Infineon Technologies | 0 | IGBT CHIP WAFER |
IRG7CH42UED | Infineon Technologies | 0 | IGBT 1200V ULTRA FAST DIE |
IRG7CH42UEF | Infineon Technologies | 0 | IGBT 1200V ULTRA FAST DIE |
IRG7CH44K10EF | Infineon Technologies | 0 | IGBT CHIP WAFER |
IRG7CH46UED | Infineon Technologies | 0 | IGBT 1200V ULTRA FAST DIE |
IRG7CH46UEF | Infineon Technologies | 0 | IGBT 1200V ULTRA FAST DIE |
IRG7CH50K10EF | Infineon Technologies | 0 | IGBT CHIP WAFER |
IRG7CH50UED | Infineon Technologies | 0 | IGBT 1200V ULTRA FAST DIE |