RJK6011DJE-00#Z0

Manufacturer :

Renesas Electronics America

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

100mA (Ta)

Drain to Source Voltage (Vdss) :

600V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

3.7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

25pF @ 25V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 Long Body (Formed Leads)

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

900mW (Ta)

Rds On (Max) @ Id, Vgs :

52 Ohm @ 50mA, 10V

Series :

-

Supplier Device Package :

TO-92(1)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

-