TSM220NB06LCR RLG

Manufacturer
Taiwan Semiconductor Corporation
Product Category
Transistors - FETs, MOSFETs - Single
Description
MOSFET SINGLE N-CHANNEL TRENCH
Manufacturer :
Taiwan Semiconductor Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
8A (Ta), 35A (Tc)
Drain to Source Voltage (Vdss) :
60V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1314pF @ 30V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
8-PowerLDFN
Packaging :
Cut Tape (CT)
Part Status :
Active
Power Dissipation (Max) :
3.1W (Ta), 68W (Tc)
Rds On (Max) @ Id, Vgs :
22 mOhm @ 8A, 10V
Series :
-
Supplier Device Package :
8-PDFN (5x6)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Datasheets
TSM220NB06LCR RLG

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