SIR112DP-T1-RE3

Manufacturer :

Vishay Siliconix

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

37.6A (Ta), 133A (Tc)

Drain to Source Voltage (Vdss) :

40V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

89nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

4270pF @ 20V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® SO-8

Packaging :

Cut Tape (CT)

Part Status :

Active

Power Dissipation (Max) :

5W (Ta), 62.5W (Tc)

Rds On (Max) @ Id, Vgs :

1.96 mOhm @ 10A, 10V

Series :

TrenchFET® Gen IV

Supplier Device Package :

PowerPAK® SO-8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

+20V, -16V

Vgs(th) (Max) @ Id :

2.4V @ 250µA