2SK536-TB-E

Manufacturer :

ON Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

100mA (Ta)

Drain to Source Voltage (Vdss) :

50V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

15pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

125°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

200mW (Ta)

Rds On (Max) @ Id, Vgs :

20 Ohm @ 10mA, 10V

Series :

-

Supplier Device Package :

SC-59

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

-