SSM3H137TU,LF

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2A (Ta)

Drain to Source Voltage (Vdss) :

34V

Drive Voltage (Max Rds On, Min Rds On) :

4V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

119pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

3-SMD, Flat Leads

Packaging :

Digi-Reel®

Part Status :

Active

Power Dissipation (Max) :

800mW (Ta)

Rds On (Max) @ Id, Vgs :

240 mOhm @ 1A, 10V

Series :

Automotive, AEC-Q101, U-MOSIV

Supplier Device Package :

UFM

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

1.7V @ 1mA