EPC8009
- Manufacturer
- EPC
- Product Category
- Transistors - FETs, MOSFETs - Single
- Description
- TRANS GAN 65V 2.7A BUMPED DIE
- Manufacturer :
- EPC
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 2.7A (Ta)
- Drain to Source Voltage (Vdss) :
- 65V
- Drive Voltage (Max Rds On, Min Rds On) :
- 5V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 0.45nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 52pF @ 32.5V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- Die
- Packaging :
- Digi-Reel®
- Part Status :
- Active
- Power Dissipation (Max) :
- -
- Rds On (Max) @ Id, Vgs :
- 130 mOhm @ 500mA, 5V
- Series :
- eGaN®
- Supplier Device Package :
- Die
- Technology :
- GaNFET (Gallium Nitride)
- Vgs (Max) :
- +6V, -4V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250µA
- Datasheets
- EPC8009
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EPC8002 | EPC | 45,000 | TRANS GAN 65V 2.7A BUMPED DIE |
EPC8002 | EPC | 51,372 | TRANS GAN 65V 2.7A BUMPED DIE |
EPC8002 | EPC | 51,372 | TRANS GAN 65V 2.7A BUMPED DIE |
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EPC8004 | EPC | 5,725 | TRANS GAN 40V 2.7A BUMPED DIE |
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EPC8009 | EPC | 5,000 | TRANS GAN 65V 2.7A BUMPED DIE |
EPC8009 | EPC | 7,131 | TRANS GAN 65V 2.7A BUMPED DIE |
EPC8010 | EPC | 12,500 | TRANS GAN 100V 2.7A BUMPED DIE |
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EPC8010 | EPC | 13,177 | TRANS GAN 100V 2.7A BUMPED DIE |
EPC8QC100 | Intel FPGAs/Altera | 0 | IC CONFIG DEVICE 8MBIT 100QFP |
EPC8QC100DM | Intel FPGAs/Altera | 0 | IC CONFIG DEVICE |
EPC8QC100N | Intel FPGAs/Altera | 0 | IC CONFIG DEVICE 8MBIT 100QFP |
EPC8QI100 | Intel FPGAs/Altera | 0 | IC CONFIG DEVICE 8MBIT 100QFP |