SI5511DC-T1-E3

Manufacturer :

Vishay Siliconix

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

4A, 3.6A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

7.1nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

435pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SMD, Flat Lead

Packaging :

Cut Tape (CT)

Part Status :

Obsolete

Power - Max :

3.1W, 2.6W

Rds On (Max) @ Id, Vgs :

55 mOhm @ 4.8A, 4.5V

Series :

TrenchFET®

Supplier Device Package :

1206-8 ChipFET™

Vgs(th) (Max) @ Id :

2V @ 250µA