SI4804BDY-T1-E3
- Manufacturer
- Vishay Siliconix
- Product Category
- Transistors - FETs, MOSFETs - Arrays
- Description
- MOSFET 2N-CH 30V 5.7A 8-SOIC
- Manufacturer :
- Vishay Siliconix
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 5.7A
- Drain to Source Voltage (Vdss) :
- 30V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-SOIC (0.154", 3.90mm Width)
- Packaging :
- Cut Tape (CT)
- Part Status :
- Obsolete
- Power - Max :
- 1.1W
- Rds On (Max) @ Id, Vgs :
- 22 mOhm @ 7.5A, 10V
- Series :
- TrenchFET®
- Supplier Device Package :
- 8-SO
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Datasheets
- SI4804BDY-T1-E3
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Part | Manufacturer | Stock | Description |
---|---|---|---|
SI4800,518 | NXP USA Inc. | 0 | MOSFET N-CH 30V 9A SOT96-1 |
SI4800BDY-T1-E3 | Vishay Siliconix | 5,000 | MOSFET N-CH 30V 6.5A 8-SOIC |
SI4800BDY-T1-E3 | Vishay Siliconix | 7,262 | MOSFET N-CH 30V 6.5A 8-SOIC |
SI4800BDY-T1-E3 | Vishay Siliconix | 7,262 | MOSFET N-CH 30V 6.5A 8-SOIC |
SI4800BDY-T1-GE3 | Vishay Siliconix | 2,500 | MOSFET N-CH 30V 6.5A 8-SOIC |
SI4800BDY-T1-GE3 | Vishay Siliconix | 3,737 | MOSFET N-CH 30V 6.5A 8-SOIC |
SI4800BDY-T1-GE3 | Vishay Siliconix | 3,737 | MOSFET N-CH 30V 6.5A 8-SOIC |
SI4804BDY-T1-E3 | Vishay Siliconix | 0 | MOSFET 2N-CH 30V 5.7A 8-SOIC |
SI4804BDY-T1-E3 | Vishay Siliconix | 0 | MOSFET 2N-CH 30V 5.7A 8-SOIC |
SI4804BDY-T1-GE3 | Vishay Siliconix | 0 | MOSFET 2N-CH 30V 5.7A 8SOIC |
SI4804CDY-T1-E3 | Vishay Siliconix | 0 | MOSFET 2N-CH 30V 8A 8SO |
SI4804CDY-T1-GE3 | Vishay Siliconix | 2,500 | MOSFET 2N-CH 30V 8A 8SOIC |
SI4804CDY-T1-GE3 | Vishay Siliconix | 4,860 | MOSFET 2N-CH 30V 8A 8SOIC |
SI4804CDY-T1-GE3 | Vishay Siliconix | 4,860 | MOSFET 2N-CH 30V 8A 8SOIC |
SI4808DY-T1-E3 | Vishay Siliconix | 0 | MOSFET 2N-CH 30V 5.7A 8SOIC |