2SD2129,ALPSQ(M

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

3A

Current - Collector Cutoff (Max) :

100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 1.5A, 3V

Frequency - Transition :

-

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-220-3 Full Pack

Packaging :

Bulk

Part Status :

Obsolete

Power - Max :

2W

Series :

-

Supplier Device Package :

TO-220NIS

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

2V @ 12mA, 3A

Voltage - Collector Emitter Breakdown (Max) :

100V