2SC5201,T6MURAF(J

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

50mA

Current - Collector Cutoff (Max) :

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 20mA, 5V

Frequency - Transition :

-

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 Long Body

Packaging :

Bulk

Part Status :

Obsolete

Power - Max :

900mW

Series :

-

Supplier Device Package :

TO-92MOD

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

1V @ 500mA, 20mA

Voltage - Collector Emitter Breakdown (Max) :

600V