EPC2001C
- Manufacturer
- EPC
- Product Category
- Transistors - FETs, MOSFETs - Single
- Description
- TRANS GAN 100V 36A BUMPED DIE
- Manufacturer :
- EPC
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 36A (Ta)
- Drain to Source Voltage (Vdss) :
- 100V
- Drive Voltage (Max Rds On, Min Rds On) :
- 5V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 900pF @ 50V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- Die
- Packaging :
- Digi-Reel®
- Part Status :
- Active
- Power Dissipation (Max) :
- -
- Rds On (Max) @ Id, Vgs :
- 7 mOhm @ 25A, 5V
- Series :
- eGaN®
- Supplier Device Package :
- Die Outline (11-Solder Bar)
- Technology :
- GaNFET (Gallium Nitride)
- Vgs (Max) :
- +6V, -4V
- Vgs(th) (Max) @ Id :
- 2.5V @ 5mA
- Datasheets
- EPC2001C
Manufacturer related products
Catalog related products
related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
EPC2001 | EPC | 51,500 | TRANS GAN 100V 25A BUMPED DIE |
EPC2001 | EPC | 51,674 | TRANS GAN 100V 25A BUMPED DIE |
EPC2001 | EPC | 51,674 | TRANS GAN 100V 25A BUMPED DIE |
EPC2001C | EPC | 202,500 | TRANS GAN 100V 36A BUMPED DIE |
EPC2001C | EPC | 203,639 | TRANS GAN 100V 36A BUMPED DIE |
EPC2007 | EPC | 0 | TRANS GAN 100V 6A BUMPED DIE |
EPC2007 | EPC | 0 | TRANS GAN 100V 6A BUMPED DIE |
EPC2007 | EPC | 0 | TRANS GAN 100V 6A BUMPED DIE |
EPC2007C | EPC | 40,000 | TRANS GAN 100V 6A BUMPED DIE |
EPC2007C | EPC | 41,471 | TRANS GAN 100V 6A BUMPED DIE |
EPC2007C | EPC | 41,471 | TRANS GAN 100V 6A BUMPED DIE |
EPC2010 | EPC | 0 | TRANS GAN 200V 12A BUMPED DIE |
EPC2010 | EPC | 0 | TRANS GAN 200V 12A BUMPED DIE |
EPC2010 | EPC | 0 | TRANS GAN 200V 12A BUMPED DIE |
EPC2010C | EPC | 19,500 | TRANS GAN 200V 22A BUMPED DIE |