2003
- Manufacturer
- Microsemi Corporation
- Product Category
- Transistors - Bipolar (BJT) - RF
- Description
- TRANS HBT RF BIPOLAR 55BT
- Manufacturer :
- Microsemi Corporation
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Current - Collector (Ic) (Max) :
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 100mA, 5V
- Frequency - Transition :
- 2GHz
- Gain :
- 8.5dB
- Mounting Type :
- Chassis Mount
- Noise Figure (dB Typ @ f) :
- -
- Operating Temperature :
- 200°C (TJ)
- Package / Case :
- 55BT-1
- Packaging :
- Bulk
- Part Status :
- Obsolete
- Power - Max :
- 12W
- Series :
- -
- Supplier Device Package :
- 55BT-1
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Datasheets
- 2003
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