2N5109

Manufacturer :

Microsemi Corporation

Product Category :

Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

400mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 50mA, 15V

Frequency - Transition :

1.2GHz

Gain :

12dB

Mounting Type :

Through Hole

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

-

Package / Case :

TO-205AD, TO-39-3 Metal Can

Packaging :

Bulk

Part Status :

Active

Power - Max :

2.5W

Series :

-

Supplier Device Package :

TO-39

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

20V