MS1006

Manufacturer :

Microsemi Corporation

Product Category :

Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

3.25A

DC Current Gain (hFE) (Min) @ Ic, Vce :

19 @ 1.4A, 6V

Frequency - Transition :

30MHz

Gain :

14dB

Mounting Type :

Stud Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

200°C

Package / Case :

M135

Packaging :

-

Part Status :

Obsolete

Power - Max :

127W

Series :

-

Supplier Device Package :

M135

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

55V