IDC04S60CEX1SA1

Manufacturer
Infineon Technologies
Product Category
Diodes - Rectifiers - Single
Description
DIODE SIC 600V 4A SAWN WAFER
Manufacturer :
Infineon Technologies
Product Category :
Diodes - Rectifiers - Single
Capacitance @ Vr, F :
130pF @ 1V, 1MHz
Current - Average Rectified (Io) :
4A (DC)
Current - Reverse Leakage @ Vr :
50µA @ 600V
Diode Type :
Silicon Carbide Schottky
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-55°C ~ 175°C
Package / Case :
Die
Packaging :
Bulk
Part Status :
Obsolete
Reverse Recovery Time (trr) :
0ns
Series :
thinQ!™
Speed :
No Recovery Time > 500mA (Io)
Supplier Device Package :
Die
Voltage - DC Reverse (Vr) (Max) :
600V
Voltage - Forward (Vf) (Max) @ If :
1.9V @ 4A
Datasheets
IDC04S60CEX1SA1

Manufacturer related products

Catalog related products

related products

Part Manufacturer Stock Description
IDC04S60CEX7SA1 Infineon Technologies 0 DIODE GEN PURPOSE SAWN WAFER
IDC05S120C5X1SA1 Infineon Technologies 0 IC DIODE EMITTER CTLR WAFER
IDC05S60CEX1SA1 Infineon Technologies 0 DIODE SIC 600V 5A SAWN WAFER
IDC08D120T6MX1SA2 Infineon Technologies 0 DIODE GEN PURP 1.2KV 10A WAFER
IDC08S120EX1SA3 Infineon Technologies 0 DIODE SCHOTTKY 1.2KV 7.5A WAFER
IDC08S120EX7SA1 Infineon Technologies 0 DIODE SCHOTTKY 1.2KV 7.5A WAFER
IDC08S60CEX1SA2 Infineon Technologies 0 DIODE SIC 600V 8A SAWN WAFER
IDC08S60CEX1SA3 Infineon Technologies 0 DIODE SIC 600V 8A SAWN WAFER
IDC08S60CEX7SA1 Infineon Technologies 0 DIODE GEN PURPOSE SAWN WAFER