IDC04S60CEX1SA1
- Manufacturer
- Infineon Technologies
- Product Category
- Diodes - Rectifiers - Single
- Description
- DIODE SIC 600V 4A SAWN WAFER
- Manufacturer :
- Infineon Technologies
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 130pF @ 1V, 1MHz
- Current - Average Rectified (Io) :
- 4A (DC)
- Current - Reverse Leakage @ Vr :
- 50µA @ 600V
- Diode Type :
- Silicon Carbide Schottky
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 175°C
- Package / Case :
- Die
- Packaging :
- Bulk
- Part Status :
- Obsolete
- Reverse Recovery Time (trr) :
- 0ns
- Series :
- thinQ!™
- Speed :
- No Recovery Time > 500mA (Io)
- Supplier Device Package :
- Die
- Voltage - DC Reverse (Vr) (Max) :
- 600V
- Voltage - Forward (Vf) (Max) @ If :
- 1.9V @ 4A
- Datasheets
- IDC04S60CEX1SA1
Manufacturer related products
Catalog related products
related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
IDC04S60CEX7SA1 | Infineon Technologies | 0 | DIODE GEN PURPOSE SAWN WAFER |
IDC05S120C5X1SA1 | Infineon Technologies | 0 | IC DIODE EMITTER CTLR WAFER |
IDC05S60CEX1SA1 | Infineon Technologies | 0 | DIODE SIC 600V 5A SAWN WAFER |
IDC08D120T6MX1SA2 | Infineon Technologies | 0 | DIODE GEN PURP 1.2KV 10A WAFER |
IDC08S120EX1SA3 | Infineon Technologies | 0 | DIODE SCHOTTKY 1.2KV 7.5A WAFER |
IDC08S120EX7SA1 | Infineon Technologies | 0 | DIODE SCHOTTKY 1.2KV 7.5A WAFER |
IDC08S60CEX1SA2 | Infineon Technologies | 0 | DIODE SIC 600V 8A SAWN WAFER |
IDC08S60CEX1SA3 | Infineon Technologies | 0 | DIODE SIC 600V 8A SAWN WAFER |
IDC08S60CEX7SA1 | Infineon Technologies | 0 | DIODE GEN PURPOSE SAWN WAFER |