D850N32TXPSA1
- Manufacturer
- Infineon Technologies
- Product Category
- Diodes - Rectifiers - Single
- Description
- DIODE GEN PURP 3.2KV 850A
- Manufacturer :
- Infineon Technologies
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- -
- Current - Average Rectified (Io) :
- 850A
- Current - Reverse Leakage @ Vr :
- 50mA @ 3200V
- Diode Type :
- Standard
- Mounting Type :
- Chassis Mount
- Operating Temperature - Junction :
- -40°C ~ 160°C
- Package / Case :
- DO-200AB, B-PUK
- Packaging :
- Bulk
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- -
- Series :
- -
- Speed :
- Standard Recovery >500ns, > 200mA (Io)
- Supplier Device Package :
- -
- Voltage - DC Reverse (Vr) (Max) :
- 3200V
- Voltage - Forward (Vf) (Max) @ If :
- 1.28V @ 850A
- Datasheets
- D850N32TXPSA1
Manufacturer related products
Catalog related products
related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
D850-15I | US-Lasers Inc. | 0 | LASER DIODE 5.6MM 15MW 850NM |
D8505I | US-Lasers Inc. | 48 | LASER DIODE 850NM 5MW |
D850N28TXPSA1 | Infineon Technologies | 0 | DIODE GEN PURP 2.8KV 850A |
D850N30TXPSA1 | Infineon Technologies | 0 | DIODE GEN PURP 3KV 850A |
D850N34TXPSA1 | Infineon Technologies | 0 | DIODE GEN PURP 3.4KV 850A |
D850N36TXPSA1 | Infineon Technologies | 0 | DIODE GEN PURP 3.6KV 850A |
D850N40TXPSA1 | Infineon Technologies | 0 | DIODE GEN PURP 4KV 850A |