1N5802
- Manufacturer
- Microsemi Corporation
- Product Category
- Diodes - Rectifiers - Single
- Description
- DIODE GEN PURP 50V 1A AXIAL
- Manufacturer :
- Microsemi Corporation
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 25pF @ 10V, 1MHz
- Current - Average Rectified (Io) :
- 1A
- Current - Reverse Leakage @ Vr :
- 1µA @ 50V
- Diode Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature - Junction :
- -65°C ~ 175°C
- Package / Case :
- A, Axial
- Packaging :
- Bulk
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 25ns
- Series :
- -
- Speed :
- Fast Recovery = 200mA (Io)
- Supplier Device Package :
- -
- Voltage - DC Reverse (Vr) (Max) :
- 50V
- Voltage - Forward (Vf) (Max) @ If :
- 875mV @ 1A
- Datasheets
- 1N5802
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1N5802 | Semtech Corporation | 0 | DIODE GEN PURP 50V 3.3A AXIAL |
1N5802US | Microsemi Corporation | 124 | DIODE GEN PURP 50V 1A D5A |
1N5802US | Semtech Corporation | 0 | DIODE GEN PURP 50V 1.1A |
1N5803 | Microsemi Corporation | 0 | DIODE GEN PURP 75V 1A AXIAL |
1N5804 | Microsemi Corporation | 312 | DIODE GEN PURP 100V 1A AXIAL |
1N5804 | Semtech Corporation | 0 | DIODE GEN PURP 100V 3.3A AXIAL |
1N5804US | Microsemi Corporation | 131 | DIODE GEN PURP 100V 1A D5A |
1N5804US | Semtech Corporation | 0 | DIODE GEN PURP 100V 1.1A |
1N5805 | Microsemi Corporation | 0 | DIODE GEN PURP 125V 1A AXIAL |
1N5806 | Semtech Corporation | 0 | DIODE GEN PURP 150V 3.3A AXIAL |
1N5806/TR | Microsemi Corporation | 0 | UFR,FRR |
1N5806C.TR | Semtech Corporation | 0 | DIODE GEN PURP 150V 2.5A AXIAL |
1N5806C.TR | Semtech Corporation | 392 | DIODE GEN PURP 150V 2.5A AXIAL |
1N5806E3/TR | Microsemi Corporation | 0 | UFR,FRR |
1N5806TR | Microsemi Corporation | 0 | DIODE GEN PURP 150V 2.5A AXIAL |