CDBGBSC201200-G
- Manufacturer
- Comchip Technology
- Product Category
- Diodes - Rectifiers - Arrays
- Description
- DIODE DUAL SILICON CARBIDE POWER
- Manufacturer :
- Comchip Technology
- Product Category :
- Diodes - Rectifiers - Arrays
- Current - Average Rectified (Io) (per Diode) :
- 25.9A (DC)
- Current - Reverse Leakage @ Vr :
- 100µA @ 1200V
- Diode Configuration :
- 1 Pair Common Cathode
- Diode Type :
- Silicon Carbide Schottky
- Mounting Type :
- Through Hole
- Operating Temperature - Junction :
- -55°C ~ 175°C
- Package / Case :
- TO-247-3
- Packaging :
- -
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 0ns
- Series :
- -
- Speed :
- No Recovery Time > 500mA (Io)
- Supplier Device Package :
- TO-247
- Voltage - DC Reverse (Vr) (Max) :
- 1200V
- Voltage - Forward (Vf) (Max) @ If :
- 1.8V @ 10A
- Datasheets
- CDBGBSC201200-G
Manufacturer related products
Catalog related products
related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
CDBGBSC101200-G | Comchip Technology | 0 | DIODE DUAL SILICON CARBIDE POWER |
CDBGBSC20650-G | Comchip Technology | 0 | DIODE DUAL SILICON CARBIDE POWER |